APTGF50SK120T1G APTGF50SK120T1G ? rev 0 august, 2007 www.microsemi.com 1 ? 6 7 cr1 cr2 8 12 4 3 ntc 12 56 q1 11 pins 1/2 ; 3/4 ; 5/6 must be shorted together absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 75 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 150 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 312 w rbsoa reverse bias safe operating area t j = 150c 100a @ 1200v application ? ac and dc motor control ? switched mode power supplies features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching frequency up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? very low stray inductance ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant buck chopper n pt igbt power module v ces = 1200v i c = 50a @ tc = 80c
APTGF50SK120T1G APTGF50SK120T1G ? rev 0 august, 2007 www.microsemi.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 500 a t j = 25c 3.2 3.7 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 125c 4.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 1 ma 4.5 6.5 v i ges gate ? emitter leakage current v ge = 20 v, v ce = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3450 c oes output capacitance 330 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 220 pf q g total gate charge 330 q ge gate ? emitter charge 35 q gc gate ? collector charge v gs = 15v v bus = 600v i c = 50a 200 nc t d(on) turn-on delay time 35 t r rise time 65 t d(off) turn-off delay time 320 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 50a r g = 5 ? 30 ns t d(on) turn-on delay time 35 t r rise time 65 t d(off) turn-off delay time 360 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 50a r g = 5 ? 40 ns e on turn-on switching energy t j = 125c 6.9 e off turn-off switching energy v ge = 15v v bus = 600v i c = 50a r g = 5 ? t j = 125c 3.05 mj chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 100 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 60 a i f = 60a 2.5 3 i f = 120a 3 v f diode forward voltage i f = 60a t j = 125c 1.8 v t j = 25c 265 t rr reverse recovery time t j = 125c 350 ns t j = 25c 560 q rr reverse recovery charge i f = 60a v r = 800v di/dt =200a/s t j = 125c 2890 nc
APTGF50SK120T1G APTGF50SK120T1G ? rev 0 august, 2007 www.microsemi.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.4 r thjc junction to case thermal resistance diode 0.9 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 80 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGF50SK120T1G APTGF50SK120T1G ? rev 0 august, 2007 www.microsemi.com 4 ? 6 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 40 80 120 160 02468 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle output characteristics (v ge =10v) t j =25c t j =125c 0 10 20 30 40 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =25c t j =25c t j =125c 0 50 100 150 200 250 0481216 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle gate charge v ce =240v v ce =600v v ce =960v 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 300 350 gate charge (nc) v ge , gate to emitter voltage (v) i c = 50a t j = 25c ic=100a ic=50a ic=25a 0 1 2 3 4 5 6 7 8 9 9 10111213141516 v ge , gate to emitter voltage (v) on state voltage vs gate to emitter volt. v ce , collector to emitter voltage (v) t j = 25c 250s pulse test < 0.5% duty cycle ic=100a ic=50a ic=25a 0 1 2 3 4 5 6 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 10 20 30 40 50 60 70 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature
APTGF50SK120T1G APTGF50SK120T1G ? rev 0 august, 2007 www.microsemi.com 5 ? 6 v ge = 15v 25 30 35 40 45 0 25 50 75 100 125 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current v ce = 600v r g = 5 ? v ge =15v, t j =25c v ge =15v, t j =125c 200 250 300 350 400 0 25 50 75 100 125 i ce , collector to emitter current (a) turn-off delay time vs collector current td(off), turn-off delay time (ns ) v ce = 600v r g = 5 ? v ge =15v 20 60 100 140 180 0255075100125 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 600v r g = 5 ? t j = 25c t j = 125c 20 30 40 50 0 25 50 75 100 125 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 600v, v ge = 15v, r g = 5 ? t j =25c, v ge =15v t j =125c, v ge =15v 0 4 8 12 16 20 24 28 0 25 50 75 100 125 i ce , collector to emitter current (a) turn-on energy loss vs collector current eon, turn-on energy loss (mj ) v ce = 600v r g = 5 ? t j = 25c t j = 125c 0 2 4 6 8 0 25 50 75 100 125 i ce , collector to emitter current (a) eoff, turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 600v v ge = 15v r g = 5 ? eon, 50a eoff, 50a eon, 25a eoff, 25a 0 2 4 6 8 10 12 14 16 18 0 1020304050 gate resistance (ohms) switching energy losses (mj) switching energy losses vs gate resistance v ce = 600v v ge = 15v t j = 125c eon, 50a eoff, 50a eon, 25a eoff, 25a 0 2 4 6 8 25 50 75 100 125 t j , junction temperature (c) switching energy losses (mj) switching energy losses vs junction temp. v ce = 600v v ge = 15v r g = 5 ?
APTGF50SK120T1G APTGF50SK120T1G ? rev 0 august, 2007 www.microsemi.com 6 ? 6 cies cres coes 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0 20 40 60 80 100 120 0 400 800 1200 i c , collector current (a) reverse bias safe operating area v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration hard switching zcs zvs 0 20 40 60 80 100 120 10 20 30 40 50 60 i c , collector current (a) operating frequency vs collector current fmax, operating frequency (khz ) v ce = 600v d = 50% r g = 5 ? t j = 125c t c = 75c microsemi reserves the right to change, without notice, the specifications and info rmation contained herein microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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